35 crystal oscillator 1 st oe 2 gnd gnd 3 out out 4 v dd v dd no. #4 #3 #1 0.5 5.08 (1.0) (1.0) 3.6 #2 5.0 2.4 2.7 max. 5.8 max. 10.5 max. recommended soldering pattern external dimensions specifications (characteristics) (unit: mm) (unit: mm) 18.4320c e ptf9352a 1.3 3.8 1.3 2.1 2.5 2.1 pin terminal SG-636sce SG-636p ?? small soj high-frequency crystal oscillator SG-636 series item output frequency range power source voltage temperature range soldering condition frequency stability current consumption duty output voltage output load condition (fan out) output enable/disable input voltage output disable current output rise time output fall time oscillation start up time aging shock resistance max. supply voltage operating voltage storage temperature operating temperature c-mos level ttl level c-mos ttl c-mos level ttl level c-mos level ttl level symbol f 0 v dd -gnd v dd t stg t opr t sol ? f/f 0 lop t w / t v oh (i oh ) v ol (i ol ) c l n v ih v il i oe t tlh t thl tosc fa s.r. SG-636ptf SG-636ptj SG-636ph specifications 41.0001 mhz to 70.0000 mhz 2.21675 mhz to 41.0000 mhz -0.5 v to +7.0 v remarks -55 c to +100 c -20 c to +70 c twice at under +260 c within 10 s or under +230 c within 3 min. c: 100 x 10 -6 17 ma max. 40 % to 60 % v dd -0.4 v min. -8 ma 16 ma 50 pf max. 10 ttl max. 2.0 v min. 0.8 v max. 10 ma max. 7 ns max. 7 ns max. 4 ms max. 35 ma max. 2.4 v min. -400 a 8 ma 15 pf 5 ttl max. 3.5 v min. 1.5 max. 28 ma max. 40 % to 60 % 20 pf max.( 55 mhz) 15 pf max.( > 55 mhz) 5 lsttl max. 2.0 v min. 0.8 v max. 20 ma max. stored as bare product after unpacking no load condition c-mos load: 1/2 v dd leve l ttl load: 1.4 v level c l < _ 15 pf i ih =1 a max.(oe=v dd )ptf.ptj.ph i il =-100 a min. (oe=gnd) ptf.ph -500 a min. (oe=gnd) ptj oe=gnd, st=gnd 2 a max.(sce) c-mos load: 20 % 80 % v dd ttl load: 0.4 v 2.4 v c-mos load: 80 % 20 % v dd ttl load: 2.4 v 0.4 v time at 4.5 v to be o s ta=+25 c,v dd =5 v ,first year three drops on a hard board from 750 mm or excitation test with 29400 m/s 2 x 0.3 ms x 1/2 sine wave in 3 directions 10 ms max. 5 x 10 -6 /year max. 20 x 10 -6 max. note: unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition. external by-pass capacitor is required. metal may be exposed on the top of this product. this won't affect any quality, reliability or electrical spec. -0.5 v to +7.0 v 45 % to 55 % 5 ns max. 5 ns max. a small smd that enables high-density mounting. a general-purpose device with builtin heat-resisting cylindrical at-cut crystal and allowing almost the same temperature condition for soldering as smd ic. low current consumption. provided with output enable function. 3.3 v operation, stand-by function available. SG-636sce/pce -0.3 v to +7.0 v 5.0 v 0.5 v 2.21675 mhz to 41.0000 mhz 3.3 v 0.3 v 9 ma max. 45 % to 55 % 30 pf max. 0.8 v dd min. 0.2 v dd max. 5 ma max. v dd -0.4 v min. 0.4 v max. 4 ms max. 5 ns max. 5 ns max. -4 ma 4 ma
36 crystal oscillator actual size specifications (characteristics) operating condition and frequency band 100 mhz 50 mhz 1 mhz 150 mhz SG-636ptw/stw/phw/shw frequency stability:b ( -20 to +70 c) operating condition SG-636ptf SG-636pce/sce SG-636ptj/ph SG-636ptw/stw/phw/shw frequency stability:c ( -20 to +70 c) SG-636pcw/scw frequency stability:b (-20 to +70 c) 32 frequency stability:c ( -20 to +70 c) SG-636pcw/scw 135 32 135 41 2.21675 135 2.21675 41 70 135 3.3 v 0.3 v 5 v 0.5 v output frequency range power source voltage temperature range soldering condition (lead part) frequency stability current consumption output disable current output disable current duty output voltage output load condition (fan out) output enable disable input voltage output rise time output fall time oscillation start up time aging shock resistance f 0 v dd -gnd v dd t stg t opr t sol ? f/f 0 iop io e i st tw/t v oh v ol c l v ih v il t tlh t thl t osc fa s.r. c-mos level ttl level c-mos level ttl level c-mos level ttl level SG-636ptw/stw SG-636phw/shw SG-636pcw/scw specifications remarks 32.0001 mhz to 135.0000 mhz -0.5 v to +7.0 v 5.0 v 0.5 v 3.3 v 0.3 v -55 c to +100 c -20 c to +70 c twice at under 260 c within 10 s or under 230 c within 3 min. b: 50 x10 -6 c: 100 x10 -6 45 ma max. 28 ma max. 30 ma max. 16 ma max. 50 a max. 40 % to 60 % 40 % to 60 % v dd -0.4 v min. 0.4 v max. 15 pf max. 10 ms max. 5 x 10 -6 /year max. 20 x 10 -6 max. no load condition oe=gnd(p*w) st=gnd(s*w) c-mos load: 1/2v dd ttl load: 1.4 v i oh = -16 m a (*tw/hw)/-8 ma( *cw) i ol = -16 m a (*tw/hw)/8 ma( *cw) oe,st oe,st c-mos load: 20 % 80 % v dd ttl load: 0.4 v 2.4 v c-mos load: 80 % 20 % v dd ttl load: 2.4 v 0.4 v time at 4.5 v to be 0 s ta=+25 c, v dd =5 v three drops on a hard board from 750 mm or excitation test with 29400 m/s 2 x 0.3 ms x 1/2 sine wave in 3 directions max. supply voltage operating voltage storage temperature operating temperature item symbol 0.7 v dd min. 0.2 v dd max. 4 ns max. 4 ns max. 2.0 v min. 0.8 v max. 4 ns max. 4 ns max. 4 ns max. 4 ns max. 36
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